SUD50N03-07 siliconix vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. c, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-55 n-channel 30-v (d-s), 175 c mosfet new product product summary v ds (v) r ds(on) ( ) i d (a) 30 0.007 @ v gs = 10 v 20 30 0.010 @ v gs = 4.5 v 16 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N03-07 absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current a t a = 25 c i d 20 continuous drain current a t a = 100 c i d 14 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 maximum power dissipation t c = 25 c p d 83 w maximum power dissipation t a = 25 c p d 5 a w operating junction and storage temperature range t j , t stg 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a r thja 30 c/w maximum junction-to-case r thjc 1.8 c/w notes a. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70767.
siliconix SUD50N03-07 vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. c, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-56 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a b v gs = 10 v, i d =20 a 0.007 drain-source on-state resistance b r ds(on) v gs = 10 v, i d =20 a, t j = 125 c 0.011 v gs = 4.5 v, i d = 20 a 0.010 forward transconductance b g fs v ds = 15 v, i d = 20 a 20 s dynamic a input capacitance c iss 5600 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 450 total gate charge c q g 70 130 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 16 nc gate-drain charge c q gd 10 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 15 v, r l = 0.3 11 20 ns turn-off delay time c t d(off) i d 50 a, v gen = 10 v, r g = 2.5 60 120 ns fall time c t f 15 40 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 55 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD50N03-07 siliconix vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. c, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-57 typical characteristics (25 c unless otherwise noted)
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs transconductance (s) g fs
25 c 55 c 5 v t c = 125 c v ds = 15 v i d = 45 a v gs = 10, 9, 8, 7, 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v c oss c iss i d drain current (a) 4 v
siliconix SUD50N03-07 vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. c, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-58 typical characteristics (25 c unless otherwise noted) on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c 0 thermal ratings
safe operating area v ds drain-to-source voltage (v) drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt temperature t a ambient temperature ( c) drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 500 100
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